Alternate Conductive Atomic Force Microscope with Scanning Capacitance Microscope to Catch Hidden Defect

Author

Chuang, T.C. ; Shen, C.M. ; Lin, S.C. ; Chou, J.H.

Author_Institution

Taiwan Semicond. Manuf. Co., Ltd., Tainan

fYear

2006

fDate

3-7 July 2006

Firstpage

209

Lastpage

213

Abstract

This paper described how to use conductive atomic force microscope (C-AFM) and scanning capacitance microscope (SCM) alternately to catch very tiny and cunning defect modes hidden in the indiscernible corner. These schemes are easily implemented with standard equipment already present in most failure analysis laboratories, and could overcome some encountered judge problems

Keywords

atomic force microscopy; doping profiles; failure analysis; integrated circuit reliability; integrated circuit testing; conductive atomic force microscope; failure analysis; hidden defects; scanning capacitance microscope; Atomic force microscopy; CMOS logic circuits; Capacitance; Failure analysis; Implants; Scanning electron microscopy; Semiconductor device manufacture; Signal processing; Surface topography; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the

Conference_Location

Singapore

Print_ISBN

1-4244-0205-0

Electronic_ISBN

1-4244-0206-9

Type

conf

DOI

10.1109/IPFA.2006.251032

Filename

4017057

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2729918