Title :
High brightness single photon sources based on photonic wires
Author :
Claudon, J. ; Bleuse, J. ; Bazin, M. ; Malik, N.S. ; Jaffrennou, P. ; Lalanne, P. ; Gregersen, N. ; Gérard, J.M.
Author_Institution :
Joint group CEA-CNRS, CEA, Grenoble, France
fDate :
June 28 2009-July 2 2009
Abstract :
We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency as large as 90% can be obtained for engineered nanowires with a tapered tip and a metallic bottom mirror coated by a thin dielectric layer. Experimentally, a record-high efficiency of 75 plusmn 10% (for a NA = 0.75 collection optics) has been measured for an InAs quantum dot embedded in such a nanowire, made of GaAs and defined by reactive-ion etching.
Keywords :
III-V semiconductors; dielectric thin films; gallium arsenide; indium compounds; integrated optics; light sources; mirrors; nanophotonics; nanowires; optical films; optical waveguides; semiconductor quantum dots; spontaneous emission; sputter etching; InAs quantum dot; InAs-GaAs; engineered nanowires; guided mode; high brightness sources; metallic bottom mirror; photon collection efficiency; photonic wires; reactive-ion etching; semiconductor quantum dot; single photon sources; single-mode photonic wire; spontaneous emission; thin dielectric layer; Brightness; Dielectrics; Geometry; Mirrors; Nanowires; Numerical simulation; Optical recording; Quantum dots; Spontaneous emission; Wires; nanowire; quantum dot; single photon source; tapering; waveguide;
Conference_Titel :
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location :
Azores
Print_ISBN :
978-1-4244-4825-8
Electronic_ISBN :
978-1-4244-4827-2
DOI :
10.1109/ICTON.2009.5185192
