Title :
Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits
Author :
El-Hennawy, Adel ; Hassan, Kamel ; El-Ela, Ashraf Ramadan Abou ; Abd El-Hameed, H.
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
Abstract :
MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition, original behavior and new I-V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which are already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology
Keywords :
MOS analogue integrated circuits; MOSFET; VLSI; analogue storage; negative resistance devices; semiconductor device models; I-V characteristics; MOSFET technology; biasing condition; characterization; gate geometry; super selective IC tank circuits; trapezoidal shape; voltage controlled negative resistance; Area measurement; Communication system control; Electrical resistance measurement; Geometry; Instruments; Integrated circuit measurements; Integrated circuit technology; MOSFET circuits; Shape; Voltage control;
Conference_Titel :
Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National
Conference_Location :
Cairo
Print_ISBN :
0-7803-5121-5
DOI :
10.1109/NRSC.1998.711502
