Title :
Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on Strained-Si
Author :
Bera, M.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur
Abstract :
This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO2 ) films on strained-Si/SiGe layers. Stress induced leakage current; trap centroid and charge trapping behavior under constant current and voltage stressing in both polarities have been studied
Keywords :
high-k dielectric thin films; integrated circuit reliability; leakage currents; ZrO2-Si-SiGe; charge trapping; constant current stress; constant voltage stress; high-k gate dielectric; microwave-plasma deposition; reliability property; stress induced leakage current; trap centroid; ultrathin dielectric film; CMOS technology; Electromagnetic heating; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon germanium; Stress; Substrates; Zirconium;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251049
