Title :
100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach
Author :
Gao, Fei ; Balakumar, S. ; Rui, Li ; Lee, S.J. ; Tung, Chib-Hang ; Du, Anyan ; Sudhiranjan, T. ; Kwong, Dim-Lee ; Hwang, W.S. ; Balasubramanian, N. ; Lo, Patrick ; Dong-Zhi, Chi
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
Abstract :
Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
Keywords :
Ge-Si alloys; MOSFET; condensation; nanotechnology; oxidation; substrates; 100 nm; HfO2-TaN; SGOI PMOSFET; Schottky PMOSFET; SiGe-Si; condensation approach; multistep oxidation; self-aligned process; Amorphous materials; Fabrication; Germanium silicon alloys; Hafnium; MOSFET circuits; Oxidation; Semiconductor films; Silicon germanium; Substrates; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251052
