Title :
Si bipolar 3.3 V transmitter/receiver IC chip set for 1 Gb/s 12-channel parallel optical interconnects
Author :
Kaminishl, K. ; Furuyama, H. ; Kojima, Keisuke ; Hirakawa, Keisuke
Author_Institution :
Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan
Abstract :
In view of the recent progress of data communication and multimedia technology, high-throughput I/O interfaces are required to realize systems that have higher performance. Many types of optical interconnects have been proposed, as alternatives to electrical ones, to solve certain problems respecting electromagnetic interference (EMI) and/or extension of connection distance. An optical parallel interconnect has an advantage of simple structure and short latency time compared with a serial one. This paper presents an IC chip set operating with a 3.3 V single power supply for 12-channel parallel optical transmitter/receiver modules as a universal interface device between inter- and/or intracabinet circuits.
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated optoelectronics; optical interconnections; silicon; transceivers; 1 Gbit/s; 3.3 V; Si; bipolar transmitter/receiver ICs; electromagnetic interference; high-throughput I/O interfaces; intercabinet circuits; intracabinet circuits; latency time; parallel optical interconnects; parallel optical transmitter/receiver modules; universal interface device; Bipolar integrated circuits; Communications technology; Data communication; Electromagnetic interference; Integrated circuit interconnections; Multimedia communication; Multimedia systems; Optical interconnections; Optical receivers; Optical transmitters;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759302