Title :
Growth and doping of β-GaN and β-(In,Ga)N films and heterostructures
Author :
Brandt, O. ; Yang, B. ; Yang, H. ; Mullhauser, J.R. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
We discuss the growth of cubic GaN and (In,Ga)N films on GaAs by plasma-assisted molecular beam epitaxy. Conditions to be satisfied for the synthesis of single-phase films are pointed out. In the case of the binary compound GaN, strictly stoichiometric growth is required, while the ternary compound (In,Ga)N has to be grown N rich for reducing the amount of In segregating on the growth front. Finally, we discuss our finding of high p-type conductivities in (Be,O)-codoped GaN films in the light of recent theoretical studies of this subject
Keywords :
III-V semiconductors; electrical conductivity; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; β-(In,Ga)N films; β-(In,Ga)N heterostructures; β-GaN films; β-GaN heterostructures; (Be,O)-codoped GaN; GaN:Be,O; doping; p-type conductivities; plasma-assisted MBE; plasma-assisted molecular beam epitaxy; single-phase films; Buffer layers; Conductive films; Conductivity; Doping; Epitaxial growth; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Plasmas; Substrates;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711530
