DocumentCode
2730520
Title
Die thickness effects in RF front-end module stack-die assemblies
Author
Liu, Kai ; Lee, YongTaek ; Kim, HyunTai ; Kim, Gwang ; Frye, Robert ; Pwint, Hlaing Ma Phoo ; Ahn, Billy
Author_Institution
STATS ChipPAC, Inc., Tempe, AZ, USA
fYear
2010
fDate
1-4 June 2010
Firstpage
1556
Lastpage
1561
Abstract
We have investigated the impact of die thickness on integrated passive device (IPD) performance both in simulation and from measurement for RF stack-die applications. Our simulation approach accurately predicts the behavior of the IPD in such stack-die configuration. This should help us to generate guidelines for RF integrated passive devices to be used in 3D stack-die packages.
Keywords
Assembly; CMOS technology; Circuits; Dielectric substrates; Inductors; Packaging; Radio frequency; Silicon; Switches; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490785
Filename
5490785
Link To Document