GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

Author

Antipov, V.G. ; Guriev, A.I. ; Elyukhin, V.A. ; Faleev, N.N. ; Kudriavtsev, Yu.A. ; Lebedev, A.B. ; Shubina, T.V. ; Zubrilov, A.S. ; Nikishin, S.A. ; Temkin, H.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1997

fDate

8-11 Sep 1997

Firstpage

15

Lastpage

23

Abstract

Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700°C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no “yellow” defect band

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; molecular beam epitaxial growth; nitridation; photoluminescence; semiconductor epitaxial layers; semiconductor growth; GSMBE; GaAs; GaN; GaN/GaAs(111)B; gas source MBE; gas source molecular beam epitaxy; hydrazine; narrow band-edge emission; nitridation; photoluminescence spectra; quasi2D growth; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Nitrogen; Propellants; Substrates; Surface reconstruction; Temperature distribution; Temperature measurement; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711533

Filename

711533