Title :
A 2.5 V 333 Mb/s/pin 1 Gb double data rate SDRAM
Author :
Hongil Yoon ; Gi Won Cha ; Chang Sik Yoo ; Nam Jong Kim ; Keum Yong Kim ; Chang Ho Lee ; Kyu Nam Lim ; Kyu Chan Lee ; Jun Young Jeon ; Tae Sung Jung ; Hong Sik Jeong ; Tae Young Jeong ; Ki Nam Kim ; Soo In Cho
Author_Institution :
Samsung Electron., Kyungki-Do, South Korea
Abstract :
While on-chip data flight times approach a few tens of nanoseconds for gigabit-scale DRAMs, a bandwidth over 250 MHz requires data input and output timing accuracy within 0.3 ns. Although a high-speed data interface can be achieved using precise clock generators such as delay locked loop (DLL), skews due to a long data access path may cause loss of internal timing margins. Diminished timing margin may be detrimental to wave pipelining for high-bandwidth. This 1 Gb double data rate (DDR) SDRAM featuring ODIC chip with nonODIC package (OCNOP), cycle-time-adaptive wave pipelining (CTAWP), and variable stage analog DLL achieves high performance despite stringent processing variations in 0.14 /spl mu/m design rules.
Keywords :
DRAM chips; clocks; delay lock loops; pipeline processing; timing; 0.14 micron; 1 Gbit; 2.5 V; 333 Mbit/s; ODIC chip; clock generators; cycle-time-adaptive wave pipelining; data access path; delay locked loop; double data rate SDRAM; high-speed data interface; internal timing margins; nonODIC package; on-chip data flight times; timing accuracy; variable stage analog DLL; Chip scale packaging; Circuit optimization; Clocks; Delay; Detectors; Integrated circuit interconnections; Latches; SDRAM; Timing; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759327