DocumentCode
2730772
Title
Statistical and voltage scaling properties of post-breakdown for ultra-thin-oxide PFETs in inversion mode
Author
Wu, Ernest ; Suné, Jordi
Author_Institution
IBM Microelectron. Div.
fYear
2006
fDate
26-30 March 2006
Firstpage
54
Lastpage
62
Abstract
Unlike in NFET devices, the understanding of progressive BD in PFETs stressed in inversion requires the consideration of several breakdown paths wearing out in parallel and competing to cause the final device failure. In this work, we consider the implications of this competition on the statistical properties of progressive breakdown in ultra-thin-gate-oxide PFETs stressed in inversion mode. Voltage acceleration of breakdown and device failure is also considered
Keywords
inversion layers; power field effect transistors; semiconductor device breakdown; statistical analysis; device failure; inversion mode; post-breakdown; statistical scaling; ultra thin-oxide PFET; voltage acceleration; voltage scaling; Acceleration; Breakdown voltage; Degradation; Electric breakdown; Extrapolation; Failure analysis; Leak detection; Microelectronics; Residual stresses; Statistical distributions;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251191
Filename
4017132
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