Title :
Statistical and voltage scaling properties of post-breakdown for ultra-thin-oxide PFETs in inversion mode
Author :
Wu, Ernest ; Suné, Jordi
Author_Institution :
IBM Microelectron. Div.
Abstract :
Unlike in NFET devices, the understanding of progressive BD in PFETs stressed in inversion requires the consideration of several breakdown paths wearing out in parallel and competing to cause the final device failure. In this work, we consider the implications of this competition on the statistical properties of progressive breakdown in ultra-thin-gate-oxide PFETs stressed in inversion mode. Voltage acceleration of breakdown and device failure is also considered
Keywords :
inversion layers; power field effect transistors; semiconductor device breakdown; statistical analysis; device failure; inversion mode; post-breakdown; statistical scaling; ultra thin-oxide PFET; voltage acceleration; voltage scaling; Acceleration; Breakdown voltage; Degradation; Electric breakdown; Extrapolation; Failure analysis; Leak detection; Microelectronics; Residual stresses; Statistical distributions;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251191
