DocumentCode
2730775
Title
The leaky surface wave in SiO2/49° Y -X LiNbO3 structure
Author
Jiang, Z.L. ; Wu, W.Q. ; Shui, Y.A. ; Yin, J.H.
Author_Institution
Inst. of Acoust., Nanjing Univ., China
fYear
1989
fDate
3-6 Oct 1989
Firstpage
295
Abstract
The leaky surface wave characteristics in SiO2/49° Y -X LiNbO3 are investigated. Within the range 0<kh <0.5 the attenuation of LSW is very small, close to 0. When interdigital transducers (IDTs) are in the interface, K 2 (the electromechanical coupling constant) will increase as kdh (film thickness normalized to wavelength) increases. The maximum K 2 is 15%, i.e. about 1.08 times as large as the electromechanical coupling coefficient at zero film thickness. Several zero TCD (temperature coefficient of delay) points exist for the SiO2/49° Y -X LiNbO 3 structure. In the range -40°C<T <60°C, TCD changes less than 4 p.p.m
Keywords
lithium compounds; losses; silicon compounds; surface acoustic waves; ultrasonic propagation; -40 to 60 C; IDT; LSW attenuation; SAW; SiO2-LiNbO3; SiO2-LiNbO3 structure; TCD; electromechanical coupling constant; film thickness; interdigital transducers; leaky surface wave characteristics; surface acoustic waves; temperature coefficient of delay; Attenuation; Boundary conditions; Consumer electronics; Military communication; Military equipment; Propagation losses; Radar signal processing; Storage area networks; Surface waves; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location
Montreal, Que.
Type
conf
DOI
10.1109/ULTSYM.1989.66998
Filename
66998
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