Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Author

Gaymann, A. ; Maier, M. ; Kohler, K. ; Bronner, W. ; Grotjahn, F. ; Hornung, J. ; Ludwig, M.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1997

fDate

8-11 Sep 1997

Firstpage

41

Lastpage

44

Abstract

Detailed studies of segregation and diffusion of the dopants Si and Be in MBE grown AlGaAs/GaAs heterostructures for optoelectronic devices are presented. Segregation of Si could be suppressed by lowering the substrate temperature during the growth of a few monolayers after the deposition of the doped layers. Solubility limits of Be were observed to depend on the Al mole fraction. Be diffusion in the laser structures was negligible at doping concentrations below these solubility limits. As an application, transmitter OEICs were fabricated using laser-HEMT structures grown with optimized growth conditions. The devices operated successfully at 15 GBit/s

Keywords

III-V semiconductors; aluminium compounds; beryllium; doping profiles; gallium arsenide; high electron mobility transistors; integrated optoelectronics; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor lasers; silicon; surface segregation; AlGaAs-GaAs:Si,Be; AlGaAs/GaAs laser-HEMT structures; diffusion; dopant redistribution suppression; doping concentrations; molecular beam epitaxy; optoelectronic transmitters; segregation; solubility limits; substrate temperature lowering; Doping; Gallium arsenide; HEMTs; Hall effect; Molecular beam epitaxial growth; Monolithic integrated circuits; Optical transmitters; Substrates; Temperature sensors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711540

Filename

711540