Title :
A Comprehensive Study of FN Degradation for Driver MOSFETs in Nonvolatile Memory Circuit
Author :
Aono, H. ; Murakami, E. ; Mizuno, T. ; Sato, H. ; Haraguchi, K. ; Kato, M. ; Kubota, K.
Author_Institution :
Renesas Technol. Corp., Ibaraki
Abstract :
A degradation mode by FN stress is investigated comprehensively. We demonstrate that this degradation really occurs in driver MOSFETs in actual circuits after E/W operation. We also exhibit that this degradation has strong correlation with total injected gate and substrate current and propose a hot-hole induced degradation mechanism
Keywords :
MOSFET; random-access storage; FN degradation; MOSFET; gate current; nonvolatile memory circuit; substrate current; Degradation; Driver circuits; MOSFET circuits; Niobium compounds; Nonvolatile memory; Semiconductor device measurement; Stress measurement; Testing; Titanium compounds; Voltage; Driver MOSFET´s; FN degradation; Nonvolatile Memory; gate current; substrate current;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251193
