Title :
MBE growth of metamorphic In(Ga)AlAs buffers
Author :
Sexl, M. ; Bohm, G. ; Maier, M. ; Trankle, G. ; Weimann, G. ; Abstreiter, G.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Germany
Abstract :
Metamorphic buffer layers were grown by MBE on GaAs-substrates using linearly graded InAlAs and InGaAlAs buffers to accommodate lattice misfit. The surface morphology was investigated by AFM, the relaxation behavior of the metamorphic buffers are studied by high resolution X-ray diffraction. The degree of relaxation is 86% for the ternary buffer and 90% for the quarternary buffer. Increasing the final In-composition of the buffer up to a value of 0.63, the In0.52Al0.48As/In0.53Ga0.47 As layers on top of the metamorphic buffer are unstrained. Transport properties of 2DEG-structures approach those of lattice matched reference samples on InP-substrates
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; surface topography; 2DEG-structures; AFM; In0.52Al0.48As; In0.52Al0.48As/In0.53Ga0.47 As; In0.53Ga0.47As; InGaAlAs; MBE growth; high resolution X-ray diffraction; lattice misfit; metamorphic In(Ga)AlAs buffers; relaxation behavior; surface morphology; Buffer layers; Epitaxial layers; Indium compounds; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711543
