• DocumentCode
    2731110
  • Title

    MBE growth of metamorphic In(Ga)AlAs buffers

  • Author

    Sexl, M. ; Bohm, G. ; Maier, M. ; Trankle, G. ; Weimann, G. ; Abstreiter, G.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Germany
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    Metamorphic buffer layers were grown by MBE on GaAs-substrates using linearly graded InAlAs and InGaAlAs buffers to accommodate lattice misfit. The surface morphology was investigated by AFM, the relaxation behavior of the metamorphic buffers are studied by high resolution X-ray diffraction. The degree of relaxation is 86% for the ternary buffer and 90% for the quarternary buffer. Increasing the final In-composition of the buffer up to a value of 0.63, the In0.52Al0.48As/In0.53Ga0.47 As layers on top of the metamorphic buffer are unstrained. Transport properties of 2DEG-structures approach those of lattice matched reference samples on InP-substrates
  • Keywords
    III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; surface topography; 2DEG-structures; AFM; In0.52Al0.48As; In0.52Al0.48As/In0.53Ga0.47 As; In0.53Ga0.47As; InGaAlAs; MBE growth; high resolution X-ray diffraction; lattice misfit; metamorphic In(Ga)AlAs buffers; relaxation behavior; surface morphology; Buffer layers; Epitaxial layers; Indium compounds; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711543
  • Filename
    711543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2731110