Title :
Results of 3" and 4" low-gradient s.i. GaAs growth under controlled vapor pressure
Author :
Neubert, M. ; Rudolph, P. ; Seifert, M.
Author_Institution :
Inst. fur Kristallzuchtung, Berlin, Germany
Abstract :
The VCZ technique is promising to grow s.i. GaAs with improved structural quality. Its main idea is to pull the crystals in low temperature gradients to reduce the thermally induced stress. The dislocation density can reproducibly be decreased down to 104 cm-2 and below in 3" and 4" crystals. Within the best samples the radial dislocation density distribution was markedly homogenized (total seater of a factor of 2 to 3). Electrical parameters of VCZ crystals roughly match those of conventional LEC material
Keywords :
III-V semiconductors; crystal growth from melt; dislocation density; gallium arsenide; semiconductor growth; 3 in; 4 in; GaAs; GaAs growth; controlled vapor pressure; dislocation density; low temperature gradients; radial dislocation density distribution; thermally induced stress; Crystalline materials; Crystals; Etching; Gallium arsenide; Image analysis; Measurement standards; Stress measurement; Temperature; Thermal stresses; Vibration measurement;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711545
