Impact of growth interruption on interface roughness of MOCVD grown InGaAs/InAlAs studied by photoreflectance spectroscopy

Author

Bru-Chevallier, C. ; Baltagi, Y. ; Guillot, G. ; Hong, K. ; Pavlidis, D.

Author_Institution

Inst. Nat. des Sci. Appliquees, Villeurbanne, France

fYear

1997

fDate

8-11 Sep 1997

Firstpage

57

Lastpage

60

Abstract

The interface quality of InAs/InGaAs heterostructures used in High-Electron-Mobility-Transistors (HEMTs) is evaluated as a function of growth interruption time, using photoreflectance spectroscopy on 250 a InGaAs single quantum wells between InAlAs layers. Assessment of the interface roughness is derived from the broadening of the high order quantum confined transitions. The higher the growth interruption time, the smaller the interface roughness as derived from PR measurements. The results are in good agreement with higher electron mobility values measured by Hall effect

Keywords

III-V semiconductors; MOCVD coatings; aluminium compounds; gallium arsenide; indium compounds; interface structure; photoreflectance; semiconductor growth; semiconductor heterojunctions; surface topography; HEMT; Hall effect; High-Electron-Mobility-Transistors; InGaAs-InAlAs; MOCVD grown InGaAs/InAlAs; growth interruption; interface quality; interface roughness; photoreflectance spectroscopy; single quantum wells; Electron mobility; HEMTs; Hall effect; Indium compounds; Indium gallium arsenide; MOCVD; MODFETs; Potential well; Spectroscopy; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711547

Filename

711547