Title :
Patterned high-index substrates as templates for novel quantum-wire and dot arrays: growth and potential applications
Author :
Notzel, Richard ; Ramsteiner, Manfred ; Niu, Zhichuan ; Daweritz, Lutz ; Ploog, Klaus H.
Author_Institution :
Paul-Drude-Inst. fur Festkoperelektronik, Berlin, Germany
Abstract :
On patterned GaAs (311)A substrates lateral GaAs/(AlGa)As quantum wires are formed by MBE at the fast growing sidewall of mesa stripes along [01-1]. This new growth mode develops a smooth, convex surface profile without faceting. The wires exhibit narrow PL linewidths, high PL efficiency and strong confinement up to room temperature, For a given mesa height the wires can be vertically stacked in three-dimensional arrays. Strained (InGa)As quantum wires reveal strongly enhanced optical nonlinearity due to internal piezoelectric fields. In different structures (InGa)As islands can be positioned selectively on the patterned substrate. Finally, in atomic hydrogen assisted MBE step bunching across the GaAs wires forms arrays of quantum dots whose μ-PL spectra are dominated by one single sharp line
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; GaAs-AlGaAs; MBE; convex surface profile without faceting; fast growing sidewall; lateral GaAs/(AlGa)As quantum wires; novel quantum-wire arrays; patterned GaAs (311)A substrates; patterned high-index substrates; quantum dot arrays; strongly enhanced optical nonlinearity; templates; Gallium arsenide; Nanostructures; Quantum dots; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature; US Department of Transportation; Wires;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711550
