DocumentCode :
2731369
Title :
Investigation of Thermal Neutron Induced Soft Error Rates in Commercial Srams with 0.35 μm to 90 nm Technologies
Author :
Olmos, Marcos ; Gaillard, Remi ; Van Overberghe, A. ; Beaucour, Jérôme ; Wen, ShiJie ; Chung, Sung
Author_Institution :
iROC Technol., Grenoble
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
212
Lastpage :
216
Abstract :
Measurement of soft error rates (SER) often commercial SRAMs of 0.35 μm to 90 nm technologies have been completed at the Institut Laue-Langevin (ILL) neutron facility. Results establish the sensitivity of old and recent SRAM technologies showing the impact of 10B concentrations in BPSG and p-type regions. 10B results are also compared to high-energy neutron SER
Keywords :
SRAM chips; neutron effects; sensitivity; 0.35 micron; 90 nm; SER; commercial SRAM; high-energy neutron soft error rates; sensitivity; soft error rates measurement; thermal neutron induced soft error rates; Boron; Doping; Error analysis; Neutrons; Particle beams; Planarization; Random access memory; Single event upset; Testing; Tomography; 10B; boron; cross-section; single-event upset (SEU); soft error; thermal neutrons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251219
Filename :
4017160
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2731369
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