Title :
ZnO grown by chemical solution deposition
Author :
Kauk, M. ; Muska, K. ; Altosaar, M. ; Danilson, M. ; Õunpuu, K. ; Varema, T. ; Volobujeva, O.
Author_Institution :
Dept. of Mater. Sci., Tallinn Univ. of Technol., Tallinn, Estonia
Abstract :
Zinc oxide (ZnO) films were grown on different substrates by the chemical solution deposition method from an ammonium zincate complex solution. The structure, morphology, composition, and optical properties of the films were studied by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, and UV-VIS spectroscopy. Results reveal that the deposited layers consist of ZnO nanorods with strong c-axis orientation. The observed Raman spectra are in excellent agreement with those reported in literature. The E2(high) mode at 437 cm-1, having the strongest intensity of all samples, is characteristic of the ZnO hexagonal wurzite structure. The diameter of the rods is about 90 nm and the thickness of the ZnO layer is between 140 nm to 2,3 μm. Different deposition parameters such as the concentration of the zincate complex and the temperature of the bath, the deposition time and dipping process effects are discussed.
Keywords :
II-VI semiconductors; Raman spectra; X-ray diffraction; X-ray photoelectron spectra; chemical vapour deposition; nanorods; scanning electron microscopy; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; Raman spectroscopy; UV-VIS spectroscopy; X-ray diffraction; X-ray photoelectron spectroscopy; ZnO; ammonium zincate complex solution; c-axis orientation; chemical solution deposition method; dipping process effects; hexagonal wurzite structure; nanorods; optical film property; scanning electron microscopy; size 140 mum to 2.3 mum; Chemicals; Glass; Morphology; Optical films; Substrates; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614047