DocumentCode :
2731625
Title :
Flash Memory Field Failure Mechanisms
Author :
Muroke, Pekka
Author_Institution :
Nokia Corp.
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
313
Lastpage :
316
Abstract :
This paper presents a study of flash memory field failures encountered in mobile phone applications. Failure analyses carried out by the flash memory manufacturers have been surveyed, and the failure root causes have been classified. Failure mechanism distributions are presented. Failures related to the manufacturing process defects are the dominant ones in the analyzed failure cases. Defect control and screening are key factors to field EFR (early failure rate) control, monitoring and improvement
Keywords :
circuit reliability; failure analysis; flash memories; mobile handsets; defect control; early failure rate; failure analysis; flash memory field failures; manufacturing process defects; mobile phones; Costs; Degradation; Dielectric losses; Electronic equipment testing; Failure analysis; Flash memory; Mobile handsets; Nonvolatile memory; Stress; Voltage; EFR; Flash reliability; NOR flash; field failure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251235
Filename :
4017175
Link To Document :
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