Title :
Impact of Nitrogen on PBTI Characteristics of HfSiON/TiN Gate Stacks
Author :
Krishnan, Siddarth A. ; Quevedo-Lopez, Manuel ; Li, Hong-Jyh ; Kirsch, Paul ; Choi, Rino ; Young, Chadwin ; Peterson, Jeff J. ; Lee, Byoung Hun ; Bersuker, Gennadi ; Lee, Jack C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
The impact of nitrogen on charge trapping induced positive bias temperature instability (PBTI) characteristics in HfSiON/TiN gate stacks is investigated. While thickness is found to be the primary parameter to reduce charge trapping, plasma nitrogen reduces PBTI effects in thick (2.7 nm) HfSiON films. Thin films (1.8 nm) show significantly lower threshold voltage (VTH) shift than thick films and seem to be insensitive to N content. Thermal nitridation exacerbates the PBTI effects more than plasma nitridation
Keywords :
electron traps; hafnium compounds; high-k dielectric thin films; nitridation; nitrogen; reliability; thick films; titanium compounds; 1.8 nm; 2.7 nm; HfSiON-TiN; charge trapping; plasma nitridation; positive bias temperature instability; thermal nitridation; thick films; thin films; Annealing; Dielectrics; Electron traps; Nitrogen; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Plasma x-ray sources; Tin;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251237
