Title :
Impact of Metal Wet Etch on Device Characteristics and Reliability for Dual Metal Gate/High-k CMOS
Author :
Zhang, Zhibo ; Hussain, Muhammad Mustafa ; Bae, Sang Ho ; Song, S.C. ; Lee, Byoung Hun
Author_Institution :
Texas Instrum., Austin, TX
Abstract :
This paper presents a comparative study of the impact of metal wet etch on carrier mobility and metal gate/high-k device characteristics and reliability. A TaSiN metal wet etch process that is highly selective to the underlying HfO2 dielectric has been developed. While the metal wet etch slightly degraded the electron mobility, it did not affect hole mobility. It did not show any effect on fast transient charge trapping, and, in fact, improved negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI)
Keywords :
CMOS integrated circuits; electron mobility; electron traps; etching; hafnium compounds; high-k dielectric thin films; hole mobility; semiconductor device reliability; silicon compounds; tantalum compounds; HfO2; TaSiN; carrier mobility; charge trapping; device characteristics; device reliability; dual metal gate CMOS; electron mobility; high-k CMOS; hole mobility; metal wet etch; negative bias temperature instability; positive bias temperature instability; Degradation; Electron mobility; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Negative bias temperature instability; Niobium compounds; Titanium compounds; Wet etching; Carrier mobility; Dual metal gate CMOS; Gate dielectric reliability; High-k; Metal wet etch;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251250
