Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology

Author

Tian, C. ; Park, B. ; Kothandaraman, C. ; Safran, J. ; Kim, D. ; Robson, N. ; Iyer, S.S.

Author_Institution

IBM Syst. & Technol. Group, Semicond. Res. & Dev. Center, Hopewell Junction, NY

fYear

2006

fDate

26-30 March 2006

Firstpage

392

Lastpage

397

Abstract

The reliability of CoSi₂/p-poly Si electrical fuse (eFUSE) programmed by electromigration for 90nm technology will be presented. Both programmed and unprogrammed fuse elements were shown to be stable through extensive reliability evaluations. A qualification methodology is demonstrated to define an optimized reliable electrical fuse programming window by combining fuse resistance measurements, physical analysis, and functional sensing data. This methodology addresses the impact on electrical fuse reliability caused by process variation and device degradation (e.g., NBTI) in the sensing circuit and allows an adequate margin to ensure electrical fuse reliability over the chip lifetime

Keywords

cobalt compounds; electric fuses; electric resistance measurement; electromigration; semiconductor device reliability; 90 nm; CoSi₂; device degradation; electrical fuse; electromigration; functional sensing data; fuse resistance measurements; physical analysis; process variation; qualification methodology; reliability qualification; sensing circuit; Circuits; Degradation; Electrical resistance measurement; Electromigration; Functional programming; Fuses; Niobium compounds; Optimization methods; Qualifications; Titanium compounds; CoSi2 electrical fuse; programming window; reliability; resistance stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251234

Filename

4017191