GaInNAs QW with GaNAs intermediate layer for long wavelength laser

Author

Maskuriy, F. ; Alias, M.S. ; Mitani, S.M. ; Manaf, A.A.

Author_Institution

TM Innovation Centre, Telekom R&D Sdn. Bhd., Cyberjaya, Malaysia

fYear

2011

fDate

25-28 Sept. 2011

Firstpage

610

Lastpage

613

Abstract

In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T₀ of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; physics computing; quantum well lasers; wide band gap semiconductors; GaInNAs-GaNAs; PICS3D simulation software; current 195 mA; intermediate layer; long wavelength laser; optical properties; photoluminescence; rectangular quantum well laser; temperature 270 K; threshold current; wavelength 1327 nm; Diode lasers; Gallium arsenide; Nitrogen; Quantum well lasers; Temperature; GaInNAs; long wavelength lasers; quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications (ISIEA), 2011 IEEE Symposium on

Conference_Location

Langkawi

Print_ISBN

978-1-4577-1418-4

Type

conf

DOI

10.1109/ISIEA.2011.6108787

Filename

6108787