Title :
Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices
Author :
Ku, Pon S. ; Chung, Young
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ
Abstract :
Reliability of AlOx magnetic tunnel junction (MTJ) devices is studied by investigating resistance drift behaviors under various stress conditions. Both reversible and permanent traps processes are observed during stress. Under unipolar pulsed stress, the resistance drift reveals a strong dependence on the operation frequency and duty cycle, which is believed to be attributed to the kinetics of reversible traps. Relative reliability performance of MTJ devices is analyzed from the resistance drift respects
Keywords :
aluminium compounds; electric resistance; magnetic storage; magnetic traps; magnetic tunnelling; reliability; AlOx; magnetic tunnel junction; permanent trap; resistance drift; reversible trap; stress conditions; Aluminum oxide; Current measurement; Electrical resistance measurement; Frequency; Magnetic tunneling; Temperature dependence; Temperature distribution; Temperature measurement; Thermal resistance; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251258
