• DocumentCode
    2732079
  • Title

    Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices

  • Author

    Ku, Pon S. ; Chung, Young

  • Author_Institution
    Freescale Semicond. Inc., Tempe, AZ
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    437
  • Lastpage
    441
  • Abstract
    Reliability of AlOx magnetic tunnel junction (MTJ) devices is studied by investigating resistance drift behaviors under various stress conditions. Both reversible and permanent traps processes are observed during stress. Under unipolar pulsed stress, the resistance drift reveals a strong dependence on the operation frequency and duty cycle, which is believed to be attributed to the kinetics of reversible traps. Relative reliability performance of MTJ devices is analyzed from the resistance drift respects
  • Keywords
    aluminium compounds; electric resistance; magnetic storage; magnetic traps; magnetic tunnelling; reliability; AlOx; magnetic tunnel junction; permanent trap; resistance drift; reversible trap; stress conditions; Aluminum oxide; Current measurement; Electrical resistance measurement; Frequency; Magnetic tunneling; Temperature dependence; Temperature distribution; Temperature measurement; Thermal resistance; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251258
  • Filename
    4017199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2732079