Title :
A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics
Author :
Kim, Jinyoung ; Ogawa, Ennis T. ; McPherson, Joe W.
Author_Institution :
Silicon Technol. Dev., Texas Instrum., Inc., Dallas, TX
Abstract :
Extensive time-dependent dielectric breakdown (TDDB) data were taken for several silica-based low-k interconnect dielectrics so that the full statistical-distribution for the field acceleration parameter (gamma) could be determined. The low-k materials tested during this study included: SiOF (k=3.6), SiOCl (k=2.9), SiOC2 (k=2.6) and MSQ (k=2.3). While a strong material-dependence was found for the breakdown strength and time-to-failure, all of these silica-based materials tested at 105degC were observed to have a similar field acceleration parameter of gamma = 4.13 +/- 0.85 cm/MV
Keywords :
dielectric materials; electric breakdown; integrated circuit interconnections; materials testing; silicon compounds; statistical distributions; 105 C; SiOC2; SiOCl; SiOF; breakdown strength; field acceleration parameter; full statistical-distribution; low-k materials; silica-based low-k interconnect dielectrics; statistical evaluation; time dependent dielectric breakdown testing; time-to-failure; Acceleration; Dielectric breakdown; Dielectric constant; Dielectric materials; Electric breakdown; Extrapolation; Life estimation; Materials testing; Statistical analysis; Statistical distributions; BEOL; Breakdown; Field Acceleration Parameter; Low-k Dielectric; Reliability; TDDB;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251265
