DocumentCode :
2732241
Title :
Reaching grid parity using BP Solar crystalline silicon technology
Author :
Cunningham, Daniel W. ; Wohlgemuth, John H. ; Clark, Roger F. ; Posbic, Jean P. ; Zahler, James M. ; Gleaton, Mark ; Carlson, David E. ; Xia, Zhiyong ; Miller, Jay ; Maisano, Lisa
Author_Institution :
BP Solar Int., Frederick, MD, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
This paper reports on BP Solar´s DOE sponsored Technology Pathways Partnership. The paper presents the goals, the technical approach and progress for two years. The overall goals of the program are to reach grid parity for residential and commercial markets and to increase production volumes. This program is addressing all aspects of the PV product chain including: · Solar grade silicon (SGS) development; · Implementation of Mono2™ technology (single crystal quality at multi cost); · Wafering thinner wafers using thinner wire; · Optimized cell process for thin Mono2™ to achieve a cell efficiency of 18 % in 2010; · Lower module material costs and products designed for integration into specific roof types; · Automation and process control for handling hundreds of cells per minute and; · Inverters designed with the capability to dispatch batteries. Specific accomplishments reported on in this paper include: · A manufacturing trial of Mono2™ technology from casting through module production; · Product development for a utility scale module; · Development of ThermoCool™ encapsulant to reduce module operating temperatures; · Work with Dow Corning to qualify a silicone based encapsulation system and; · Evaluation of measured versus modeled module and array performance.
Keywords :
elemental semiconductors; power markets; silicon; solar cells; BP solar crystalline silicon technology; Dow Corning; SGS development; ThermoCool; automation and process control; commercial markets; crystal quality; grid parity; module material costs; optimized cell process; product development; solar grade silicon development; wafering thinner wafers; Arrays; Conductivity; MONOS devices; Production; Resistance; Silicon; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614084
Filename :
5614084
Link To Document :
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