Title :
Dielectric Conduction Mechanisms of Advanced Interconnects: Evidence for Thermally- Induced 3D /2 D Transition
Author :
Guedj, C. ; Claret, N. ; Arnal, V. ; Aimadeddine, M. ; Barnes, J.P. ; Barbe, J.C. ; Arnaud, L. ; Reimbold, G. ; Torres, J. ; Passemard, G. ; Boulanger, F.
Author_Institution :
CEA-LETI, Grenoble
Abstract :
Electrical, electro-optical, mechanical and microstructural characterizations explain why the leakage currents in advanced Cu/ultra-low K interconnects can change from bulk (3D) to mostly interfacial (2D) above 150degC. A physical model consistent with all these results is proposed
Keywords :
copper; dielectric materials; integrated circuit interconnections; leakage currents; Cu; advanced copper interconnects; dielectric conduction mechanism; leakage current; thermally-induced 3D-2D transition; ultra-low K interconnects; Dielectric measurements; Leakage current; Moisture; Passivation; Power measurement; Semiconductor device modeling; Temperature dependence; Temperature distribution; Testing; Thermal conductivity; 2D; 3D; ULK; conduction; dielectric; interconnect; interface; leakage; low-k SiCOH;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251269
