• DocumentCode
    2732317
  • Title

    Time-to-Fail Extraction Model for the "Mixed-Mode" Reliability of High-Performance SiGe Bipolar Transistors

  • Author

    Panko, Danielle ; Vanhoucke, T. ; Campos, Richard ; Hurkx, G.A.M.

  • Author_Institution
    Philips Semicond. Fishkill, Hopewell Junction, NY
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    512
  • Lastpage
    515
  • Abstract
    We present a mixed-mode reliability time-to-fail model for high-performance SiGe HBTs. We systematically extract model parameters for 10% current-gain (hFE) degradation as function of stress parameters VMCB and IE over multiple orders of empirical drift data. The model also includes VBE readout and geometry scalings
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device reliability; SiGe; current-gain degradation; high-performance bipolar transistors; mixed-mode reliability; stress parameters; time-to-fail extraction model; Bipolar transistors; Data mining; Degradation; Geometry; Germanium silicon alloys; Iron; Silicon germanium; Solid modeling; Stress; Virtual manufacturing; avalanche; base current degradation; bipolar transistor; high-performance; mixed-mode; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251271
  • Filename
    4017212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2732317