A new self-limited growth for the fabrication of atomically uniform quantum wires and quantum dots

Author

Wang, Xue-Lun ; Ogura, Mutsuo ; Matsuhata, Hirofumi

Author_Institution

Electrotech. Lab., Tsukuba, Japan

fYear

1997

fDate

8-11 Sep 1997

Firstpage

71

Lastpage

74

Abstract

A new self-limited growth based on the control of surface migration of Ga atoms during now rate modulation epitaxial growth of GaAs on patterned substrates is demonstrated. By the use of this new growth technique, atomically uniform GaAs quantum wires and quantum dots can be realized easily, despite the existence of pattern size fluctuations in the initial substrate induced by pattern preparation processes

Keywords

III-V semiconductors; gallium arsenide; semiconductor growth; semiconductor quantum dots; semiconductor quantum wires; vapour phase epitaxial growth; GaAs; atomically uniform quantum wires; fabrication; pattern preparation processes; pattern size fluctuations; patterned substrates; quantum dots; rate modulation epitaxial growth; self-limited growth; surface migration; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Fabrication; Fluctuations; Gallium arsenide; Quantum dots; Substrates; US Department of Transportation; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711565

Filename

711565