Temperature Monitor: A New Tool to Profile Charge Distribution in NROM Memory Devices

Author

Avital, Lior ; Padovani, Andrea ; Larcher, Luca ; Bloom, Ilan ; Arie, Ruzin ; Pavan, Paolo ; Eitan, Boaz

Author_Institution

Saifun Semicond. Ltd., Netanya

fYear

2006

fDate

26-30 March 2006

Firstpage

534

Lastpage

540

Abstract

NROM memory cells are proposed as one of the most promising non-volatile memories. Issues on scaling and endurance have risen due to the presence of both electrons and holes for the control of their relative position and spread in the charge trapping material. In this paper, we present a new characterization tool able to sense charge distribution features in different program/erase conditions that can be efficiently used for program/erase bias optimization and reliability predictions. This new tool exploits temperature effects on I_D-V_GS current measurements

Keywords

electron traps; integrated memory circuits; random-access storage; semiconductor device reliability; NROM memory cells; NROM memory devices; bias optimization; characterization tool; charge trapping material; current measurements; erase conditions; nonvolatile memories; profile charge distribution; program conditions; relative position control; reliability predictions; sense charge distribution; temperature monitor; Channel hot electron injection; Charge carrier processes; Electron traps; Electronics industry; Hot carriers; Nonvolatile memory; Temperature distribution; Temperature measurement; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251275

Filename

4017216