Title :
Realistic Projections of Product Fails from NBTI and TDDB
Author :
Haggag, A. ; Moosa, M. ; Liu, N. ; Burnett, D. ; Abeln, G. ; Kuffler, M. ; Forbes, K. ; Schani, P. ; Shroff, M. ; Hall, M. ; Paquette, C. ; Anderson, G. ; Pan, D. ; Cox, K. ; Higman, J. ; Mendicino, M. ; Venkatesan, S.
Author_Institution :
Freescale Semicond. Inc., Austin, TX
Abstract :
Statistical models for deconvolving the effects of competing mechanisms on product failures are presented. Realistic projections of product fails are demonstrated on high performance microprocessors by quantifying the contribution of NBTI, TDDB and extrinsic fail mechanisms. In particular, it is shown that transistor shifts due to NBTI manifest as population tails in the product´s minimum operating voltage (Vmin) distribution, while TDDB manifests as single-bit or logic failures that constitute a separate sub-population. NBTI failures are characterized by lognormal statistics combined with a slower degradation rate (Deltat ~ t0.15 -t0.25), in contrast to TDDB failures that follow extreme-value statistics and exhibit a faster degradation rate (DeltaVt ~ t0.5)
Keywords :
SRAM chips; circuit stability; failure analysis; log normal distribution; semiconductor device breakdown; semiconductor device reliability; NBTI failures; TDDB failures; competing mechanism effects; extreme-value statistics; extrinsic fail mechanisms; high performance microprocessors; logic failures; lognormal statistics; operating voltage distribution; product failure projection; single-bit failures; statistical models; transistor shifts; Current density; Degradation; Dielectrics; Gate leakage; Leakage current; Niobium compounds; Plasma temperature; Stress; Titanium compounds; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251276