Lessons in compound semiconductor device development

Author

Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

9

Lastpage

21

Abstract

This paper is a mixture of personal opinion and technical fact merged to serve as a general guideline for compound semiconductor device choices. It may be construed as opinionated and contain several generalizations, but it is a result of the path taken by the author and results learned. The crucial importance of materials research in device development is the most important theme in the paper. Also, the need to minimize the complexity of device fabrication is also emphasized.

Keywords

III-V semiconductors; MOCVD; field effect transistors; high electron mobility transistors; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor device manufacture; wide band gap semiconductors; AlGaN; AlGaN-GaN; AlN; GaN; LPE; MBE; MOCVD; SiN; compound semiconductor FET/HEMT; compound semiconductor device development; device fabrication complexity minimization; heterostructures epitaxial techniques; liquid phase epitaxy; materials research; metalorganic chemical vapor disposition; molecular bean epitaxy; Electrons; Epitaxial growth; FETs; Frequency; Guidelines; HEMTs; MOCVD; MOSFETs; Molecular beam epitaxial growth; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146725

Filename

1146725