DocumentCode
2732596
Title
Energy efficiency of optoelectronic interfaces in scaled FinFET and SOI CMOS technologies
Author
Jun Li ; Buckwalter, James
Author_Institution
Univ. of California, San Diego, La Jolla, CA, USA
fYear
2015
fDate
20-22 April 2015
Firstpage
18
Lastpage
19
Abstract
Evolution of CMOS from planar to FinFET devices raises questions about the scaling of energy efficiency. Comparisons of driver and transimpedance amplifiers identify device characteristics that contribute to energy efficiency in CMOS-based optoelectronic circuits.
Keywords
CMOS integrated circuits; MOSFET; energy conservation; integrated optics; integrated optoelectronics; operational amplifiers; optical interconnections; silicon-on-insulator; CMOS-based optoelectronic circuits; SOI CMOS technologies; Si; driver; energy efficiency; optical interconnects; optoelectronic interfaces; scaled FinFET; transimpedance amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Interconnects Conference (OI), 2015 IEEE
Conference_Location
San Diego, CA
Print_ISBN
978-1-4799-8178-6
Type
conf
DOI
10.1109/OIC.2015.7115666
Filename
7115666
Link To Document