Inversion channel MOSFETs in 3C-SiC on silicon

Author

Wan, Jianwei ; Capano, M.A. ; Melloch, M.R. ; Cooper, J.A.Jr.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2002

fDate

8-8 Aug. 2002

Firstpage

83

Lastpage

89

Keywords

chemical vapour deposition; interface states; ion implantation; ohmic contacts; oxidation; polishing; power MOSFET; semiconductor device manufacture; semiconductor device measurement; semiconductor doping; silicon compounds; wide band gap semiconductors; 1.6 V; 1150 degC; 1250 degC; 2 h; 3 micron; 30 min; 3C polytype; 3C-SiC on Si inversion channel MOSFET; 4H polytype; 6 micron; 6H polytype; 950 degC; Ar; LPCVD deposited polysilicon gates; MOSFET current saturation; MOSFETs; O/sub 2/; P; SiC-Ni; SiC-Si; argon activation; bandgap interface state density; inversion channel mobility; lateral n-channel MOSFET; p-type epilayers; phosphorus implantation source/drain formation; polishing damage; sacrificial oxidation; spin-on dopant doping; surface smoothness; threshold voltage; unannealed nickel ohmic contacts; wet O/sub 2/ re-oxidation; wet oxidation gate oxide formation; Chemical vapor deposition; Crystalline materials; Interface states; MOSFETs; Oxidation; Photonic band gap; Semiconductor films; Silicon carbide; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Conference_Location

Newark, DE, USA

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146735

Filename

1146735