Title :
Simulations of high linearity and high efficiency of class B power amplifiers in GaN HEMT technology
Author :
Paidi, Vamsi ; Xie, Shouxuan ; Coffie, Robert ; Mishra, Umesh K. ; Long, Stephen ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We describe the design and simulation of highly linear and highly efficient common source class B power amplifiers. Efficient broadband class B push-pull amplifiers are not feasible at microwave frequencies as baluns with desired broadband even-mode impedance are unavailable. We find, however, that a single-ended class B amplifier with bandpass filtering has an equivalent efficiency and linearity. Simulations of class B designs predict a power added efficiency (PAE) of 48% with 40 dBc of third order intermodulation product (IMD3) performance when biased close to the pinch-off voltage.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; 10 GHz; 48 percent; GaN; GaN HEMT technology; IMD3 performance; PAE; bandpass filtering; broadband amplifiers; high efficiency power amplifier design; high linearity class-B amplifiers; highly linear power amplifiers; microwave frequencies; power added efficiency; single-ended amplifier; third order intermodulation product; Band pass filters; Broadband amplifiers; Gallium nitride; HEMTs; High power amplifiers; Impedance matching; Linearity; Microwave amplifiers; Microwave filters; Microwave frequencies;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146737
