Title :
New Extensive MVHR Breakdown Models
Author :
Ribes, G. ; Bruyère, S. ; Roy, D. ; Denais, M. ; Roux, J.-M. ; Parthasarathy, C. ; Huard, V. ; Ghibaudo, G.
Author_Institution :
STMicroelectron., Crolles
Abstract :
Nowadays the SiO2 layer thickness (tox) is 1.2 nm or less, and the reliability of such ultra-thin oxide layers has become a major concern for continued scaling. Experimental observation of the empirical power law voltage-dependence was reported on ultra-thin oxides as presented in Wu et al. (2002). We have shown that this unexpected dependence could originate from the multi-vibrational excitation of the Si-H bond as stated in Ribes et al. (2004). Based on the last "multi-vibrational hydrogen release (MVHR)" model as presented in Ribes et al. (2004), we show that the MVHR model explains also oxide thickness and temperature dependences of the time to breakdown
Keywords :
semiconductor device breakdown; semiconductor device models; semiconductor device reliability; silicon compounds; Si-H bond; SiO2; extensive MVHR breakdown models; multivibrational excitation; multivibrational hydrogen release model; oxide thickness; power law voltage-dependence; semiconductor device breakdown; semiconductor device reliability; semiconductor layer thickness; temperature dependences; ultra-thin oxide layers; Bonding; Character generation; Electric breakdown; Hydrogen; Interface states; Physics; Power generation; Temperature dependence; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251292