DocumentCode :
2732744
Title :
Reliability of Au-Ag alloy wire bonding
Author :
Liu, Hai ; Chen, Qi ; Zhao, Zhenqing ; Wang, Qian ; Zeng, Jianfeng ; Chae, Jonghyun ; Lee, Jaisung
Author_Institution :
Samsung Semicond. China R&D CO., Ltd., Su Zhou, China
fYear :
2010
fDate :
1-4 June 2010
Firstpage :
234
Lastpage :
239
Abstract :
Au-Ag alloy wire is a low cost wire bonding solution instead of gold wire for IC packaging. Comparing with copper wire, Au-Ag wire has better productivity because it does not need protective gas and it is softer. The main issue of Au-Ag alloy wire bonding is its reliability in humidity environment. In present study, the bond parameters effect on PCT reliability was investigated. The correlation between the IMC profile and PCT lifetime was established. The IMC characteristic length was defined to express the relationship quantitatively. Meanwhile, The Au-Ag-Al IMC growth equation was obtained through HTS. It is found that the IMC growth rate is slower one order of magnitude than 99.99% gold wire.
Keywords :
Bonding; Copper; Costs; Equations; Gold alloys; Humidity; Integrated circuit packaging; Productivity; Protection; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2010.5490906
Filename :
5490906
Link To Document :
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