Breakdown Voltage Prediction of Ultra-Thin Gate Insulator in Electrostatic Discharge (ESD) Based on Anode Hole Injection Model

Author

Kinoshita, A. ; Mitani, Y. ; Matsuzawa, K. ; Kawashima, H. ; Sutoh, C. ; Kurihara, J. ; Hiraoka, T. ; Hirano, I. ; Muta, M. ; Takayanagi, M. ; Shigyo, N.

Author_Institution

Adv. LSI Res. Lab., Toshiba Corp., Yokohama

fYear

2006

fDate

26-30 March 2006

Firstpage

623

Lastpage

624

Abstract

A prediction model for the breakdown voltage of ultra-thin gate insulator in electrostatic discharge (ESD) is proposed. The time-dependent-dielectric-breakdown characteristics under DC stress successfully predicts ESD oriented dielectric breakdown on the basis of the modified anode hole injection model. The proposed model redistributes experimental breakdown voltages and number of pulses to breakdown in extensive gate voltages and gate insulator thicknesses. In conclusion, the present model is quite effective for the prediction of ESD reliability in highly scaled ULSI devices

Keywords

ULSI; electric breakdown; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; DC stress; ESD reliability; anode hole injection model; breakdown voltage prediction; electrostatic discharge; extensive gate voltages; gate insulator thicknesses; highly scaled ULSI devices; time-dependent-dielectric-breakdown characteristics; ultra-thin gate insulator; Acceleration; Anodes; Breakdown voltage; Design for quality; Dielectrics and electrical insulation; Electric breakdown; Electrostatic discharge; Predictive models; Stress; Ultra large scale integration; Anode Hole Injection; ESD; TLP; breakdown voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251293

Filename

4017234