Title :
Breakdown Voltage Prediction of Ultra-Thin Gate Insulator in Electrostatic Discharge (ESD) Based on Anode Hole Injection Model
Author :
Kinoshita, A. ; Mitani, Y. ; Matsuzawa, K. ; Kawashima, H. ; Sutoh, C. ; Kurihara, J. ; Hiraoka, T. ; Hirano, I. ; Muta, M. ; Takayanagi, M. ; Shigyo, N.
Author_Institution :
Adv. LSI Res. Lab., Toshiba Corp., Yokohama
Abstract :
A prediction model for the breakdown voltage of ultra-thin gate insulator in electrostatic discharge (ESD) is proposed. The time-dependent-dielectric-breakdown characteristics under DC stress successfully predicts ESD oriented dielectric breakdown on the basis of the modified anode hole injection model. The proposed model redistributes experimental breakdown voltages and number of pulses to breakdown in extensive gate voltages and gate insulator thicknesses. In conclusion, the present model is quite effective for the prediction of ESD reliability in highly scaled ULSI devices
Keywords :
ULSI; electric breakdown; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; DC stress; ESD reliability; anode hole injection model; breakdown voltage prediction; electrostatic discharge; extensive gate voltages; gate insulator thicknesses; highly scaled ULSI devices; time-dependent-dielectric-breakdown characteristics; ultra-thin gate insulator; Acceleration; Anodes; Breakdown voltage; Design for quality; Dielectrics and electrical insulation; Electric breakdown; Electrostatic discharge; Predictive models; Stress; Ultra large scale integration; Anode Hole Injection; ESD; TLP; breakdown voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251293
