Title :
Compact circuit model of GaN HFETs for mixed signal circuits
Author :
Conway, Adam ; Asbeck, Peter ; Jensen, Joseph ; Wong, William S. ; Mokhtari, Mehran ; Moon, Jeong
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
This work presents a comprehensive compact circuit model of GaN HFETs for mixed signal applications. Self-heating and trapping effects are included in the model. Model parameters can be determined by fitting measured data, or estimated analytically based on geometrical dimensions and layer structure. Good agreement has been found with measured characteristics from DC to RF.
Keywords :
III-V semiconductors; UHF field effect transistors; electron traps; gallium compounds; microwave power transistors; millimetre wave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; thermal management (packaging); wide band gap semiconductors; AlGaN-GaN; DC/RF characteristics; GaN; GaN HFET compact circuit model; HFET geometrical dimensions/layer structure; compact circuit models; microwave/mm-wave power transistors; mixed signal circuits; self-heating effects; thermal management; thermal resistance; trapping effects; Circuits; Electrical resistance measurement; Gallium nitride; HEMTs; MODFETs; Radio frequency; Solid modeling; Temperature; Thermal management; Threshold voltage;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146743
