Compact circuit model of GaN HFETs for mixed signal circuits

Author

Conway, Adam ; Asbeck, Peter ; Jensen, Joseph ; Wong, William S. ; Mokhtari, Mehran ; Moon, Jeong

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

143

Lastpage

148

Abstract

This work presents a comprehensive compact circuit model of GaN HFETs for mixed signal applications. Self-heating and trapping effects are included in the model. Model parameters can be determined by fitting measured data, or estimated analytically based on geometrical dimensions and layer structure. Good agreement has been found with measured characteristics from DC to RF.

Keywords

III-V semiconductors; UHF field effect transistors; electron traps; gallium compounds; microwave power transistors; millimetre wave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device models; thermal management (packaging); wide band gap semiconductors; AlGaN-GaN; DC/RF characteristics; GaN; GaN HFET compact circuit model; HFET geometrical dimensions/layer structure; compact circuit models; microwave/mm-wave power transistors; mixed signal circuits; self-heating effects; thermal management; thermal resistance; trapping effects; Circuits; Electrical resistance measurement; Gallium nitride; HEMTs; MODFETs; Radio frequency; Solid modeling; Temperature; Thermal management; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146743

Filename

1146743