The Dynamic Current Distribution of a Multi-Fingered GGNMOS Under High Current Stress and HBMESD Events

Author

Lee, Jian-Hsing ; Wu, Kuo-Ming ; Huang, Shao-Chang ; Tang, Chin-Hsin

Author_Institution

Taiwan Semicond. Manuf. Co.

fYear

2006

fDate

26-30 March 2006

Firstpage

629

Lastpage

630

Abstract

In this paper, the direct substrate potential (DSBP) measurement is introduced to investigate the dynamic current distribution of the multi-fingered GGNMOS under high current stress events. The DSBP measurement results show several new phenomena. The first turn-on regions are at the finger edges near the P+ guard-ring since the avalanche breakdown occurs there. Subsequently, the discharge regions quickly move to the finger centers and then, either expand into other fingers or shrink gradually

Keywords

MOSFET; current distribution; electrostatic discharge; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; substrates; voltage measurement; HBM ESD events; avalanche breakdown; direct substrate potential measurement; dynamic current distribution; high current stress; multifingered GGNMOS; Avalanche breakdown; Bipolar transistors; Current distribution; Current measurement; Electrical resistance measurement; Electrostatic discharge; Fingers; Pulse measurements; Stress measurement; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251296

Filename

4017237