Title :
The Dynamic Current Distribution of a Multi-Fingered GGNMOS Under High Current Stress and HBMESD Events
Author :
Lee, Jian-Hsing ; Wu, Kuo-Ming ; Huang, Shao-Chang ; Tang, Chin-Hsin
Author_Institution :
Taiwan Semicond. Manuf. Co.
Abstract :
In this paper, the direct substrate potential (DSBP) measurement is introduced to investigate the dynamic current distribution of the multi-fingered GGNMOS under high current stress events. The DSBP measurement results show several new phenomena. The first turn-on regions are at the finger edges near the P+ guard-ring since the avalanche breakdown occurs there. Subsequently, the discharge regions quickly move to the finger centers and then, either expand into other fingers or shrink gradually
Keywords :
MOSFET; current distribution; electrostatic discharge; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; substrates; voltage measurement; HBM ESD events; avalanche breakdown; direct substrate potential measurement; dynamic current distribution; high current stress; multifingered GGNMOS; Avalanche breakdown; Bipolar transistors; Current distribution; Current measurement; Electrical resistance measurement; Electrostatic discharge; Fingers; Pulse measurements; Stress measurement; Substrates;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251296
