Title :
Ferroelectric memory applications
Author :
Scott, J.F. ; Araujo, C.A. ; McMillan, L.D.
Author_Institution :
Colorado Univ., Boulder, CO, USA
Abstract :
Recent applications of ferroelectric thin-film memory devices are discussed. A brief description of processing alternatives and device physics is followed by some prototype architecture for Si MOSFET and GaAs JFET structures. Specific applications include radiation-hardened satellite memories, automobile nonvolatile dashboard memories, electronic camera memories, and smart credit cards and inventory devices. Shadow-RAMs, SRAMs, and DRAMs are described. Replacement of NMOS, core, EEPROM (electrically erasable programmable read-only memory), magnetic bubble memory, plated wire, and CMOS with battery backup seems possible within a few years
Keywords :
ferroelectric devices; surface acoustic wave devices; CMOS; DRAMs; EEPROM; GaAs; GaAs JFET; NMOS; SRAMs; Si; Si MOSFET; automobile nonvolatile dashboard memories; battery backup; core; electronic camera memories; ferroelectric thin-film memory devices; inventory devices; magnetic bubble memory; plated wire; prototype architecture; radiation-hardened satellite memories; shadow-RAMS; smart credit cards; Automobiles; Ferroelectric materials; Gallium arsenide; MOSFET circuits; Nonvolatile memory; Physics; Prototypes; Satellites; Smart cameras; Thin film devices;
Conference_Titel :
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location :
Montreal, Que.
DOI :
10.1109/ULTSYM.1989.66999
