Title :
Low frequency noise in Al0.4Ga0.6N thin films
Author :
Pala, N. ; Rumyantsev, S. ; Gaska, R. ; Shur, M. ; Yang, J. ; Hu, X. ; Simin, G. ; Khan, M.A.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Low-frequency noise in Al0.4GaN0.6 thin films (50 nm) was measured at room and elevated temperatures as a function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noise were observed. The Hooge parameter, α, was estimated to be about 7. The activation energy for observed g-r noise was found to be Ea∼1.0 eV. This activation energy is consistent, with the activation energy observed for g-r noise in AlGaN/GaN HFETs.
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; electron-hole recombination; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device noise; semiconductor thin films; wide band gap semiconductors; 1.0 eV; 1/f noise; 300 to 520 K; 50 nm; AlGaN thin film low frequency noise; AlGaN-GaN; AlGaN/GaN HFET; Hooge parameter estimation; MISHFET; MOSHFET; g-r noise activation energy; gate/drain voltages; generation-recombination noise; heterostructure field effect transistors; metal-insulator HFET; metal-oxide HFET; Aluminum gallium nitride; Gallium nitride; HEMTs; Low-frequency noise; Noise generators; Noise measurement; Parameter estimation; Temperature; Transistors; Voltage;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146746
