• DocumentCode
    2732843
  • Title

    Low frequency noise in Al0.4Ga0.6N thin films

  • Author

    Pala, N. ; Rumyantsev, S. ; Gaska, R. ; Shur, M. ; Yang, J. ; Hu, X. ; Simin, G. ; Khan, M.A.

  • Author_Institution
    Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2002
  • fDate
    6-8 Aug. 2002
  • Firstpage
    164
  • Lastpage
    171
  • Abstract
    Low-frequency noise in Al0.4GaN0.6 thin films (50 nm) was measured at room and elevated temperatures as a function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noise were observed. The Hooge parameter, α, was estimated to be about 7. The activation energy for observed g-r noise was found to be Ea∼1.0 eV. This activation energy is consistent, with the activation energy observed for g-r noise in AlGaN/GaN HFETs.
  • Keywords
    1/f noise; III-V semiconductors; aluminium compounds; electron-hole recombination; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device noise; semiconductor thin films; wide band gap semiconductors; 1.0 eV; 1/f noise; 300 to 520 K; 50 nm; AlGaN thin film low frequency noise; AlGaN-GaN; AlGaN/GaN HFET; Hooge parameter estimation; MISHFET; MOSHFET; g-r noise activation energy; gate/drain voltages; generation-recombination noise; heterostructure field effect transistors; metal-insulator HFET; metal-oxide HFET; Aluminum gallium nitride; Gallium nitride; HEMTs; Low-frequency noise; Noise generators; Noise measurement; Parameter estimation; Temperature; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
  • Print_ISBN
    0-7803-7478-9
  • Type

    conf

  • DOI
    10.1109/LECHPD.2002.1146746
  • Filename
    1146746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2732843