Title :
III–V photonic crystal lasers heterogeneously bonded to Silicon-On-Insulator waveguides
Author :
Karle, T.J. ; Halioua, Y. ; Raineri, F. ; Sagnes, I. ; Raj, R. ; Roelkens, G. ; van Laere, F. ; Van Thourhout, D.
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
fDate :
June 28 2009-July 2 2009
Abstract :
We report on the fabrication of InP-based 2D photonic crystal lasers operating around lambda = 1.55 mum at room temperature, integrated with and evanescently coupled to Silicon-On-Insulator waveguides. Pulsed laser operation is obtained from a line defect photonic crystal waveguide accurately aligned (< 30 nm) on top the SOI circuitry. This active-passive integration is demonstrated using an adhesive bonding technique. Lasing action is demonstrated for several low group velocity modes of the photonic crystal defect waveguide.
Keywords :
III-V semiconductors; adhesive bonding; indium compounds; integrated optics; laser modes; photonic crystals; semiconductor lasers; silicon-on-insulator; waveguide lasers; III-V photonic crystal lasers; InP; InP-based two-dimensional photonic crystal; SOI circuitry; Si; active-passive integration; adhesive bonding; evanescent coupling; heterogeneous bonding; lasing action; line defect photonic crystal waveguide; low group velocity modes; pulsed laser operation; room temperature operation; silicon-on-insulator waveguides; temperature 293 K to 298 K; wavelength 1.55 mum; Bonding; Coupling circuits; Optical coupling; Optical device fabrication; Optical pulses; Photonic crystals; Pulse circuits; Silicon on insulator technology; Temperature; Waveguide lasers; InP; SOI; active-passive integration; lasers; photonic crystals;
Conference_Titel :
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location :
Azores
Print_ISBN :
978-1-4244-4825-8
Electronic_ISBN :
978-1-4244-4827-2
DOI :
10.1109/ICTON.2009.5185334
