Title :
Injector design for optimized tunneling in standard CMOS floating-gate analog memories
Author :
Madrenas, J. ; Ivorra, A. ; Alarcón, E. ; Moteno, J.M.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
Abstract :
Programming mechanisms in floating-gate non-volatile (EEPROM) standard-CMOS memories are briefly reviewed. A methodology to optimize the programming time in poly1-poly2 Fowler-Nordheim based structures is proposed. From design constraints, the optimum number of bumps and bootstrap capacitance value are obtained to maximize the programming speed for a given programming voltage
Keywords :
CMOS analogue integrated circuits; analogue storage; capacitance; integrated circuit design; tunnelling; bootstrap capacitance value; design constraints; injector design; nonvolatile memories; optimized tunneling; poly1-poly2 Fowler-Nordheim based structures; programming mechanisms; programming speed; programming time; programming voltage; standard CMOS floating-gate analog memories; Adaptive systems; Analog memory; DH-HEMTs; Design optimization; EPROM; Electrons; Flash memory; Nonvolatile memory; Tunneling; Voltage;
Conference_Titel :
Circuits and Systems, 1998. Proceedings. 1998 Midwest Symposium on
Conference_Location :
Notre Dame, IN
Print_ISBN :
0-8186-8914-5
DOI :
10.1109/MWSCAS.1998.759522
