Flicker noise measurements in enhancement mode and depletion mode n-MOS transistors

Low-frequency noise measurements on both enhancement mode and depletion mode n-channel devices are presented. The results demonstrate that flicker noise fellows McWhorter´s tunneling model in enhancement mode MOSFETs (metal-oxide-semiconductor field-effect transistors). In the depletion mode device, the flicker noise follows McWhorter´s tunneling model in the accumulation region. However, as the conducting channel moves away from the Si-SiO₂ interface, the spectral characteristics change, and evidence of generation-recombination noise is observed. When the surface is inverted, a noise associated with the inversion layer is observed