Title :
Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric
Author :
Pompl, T. ; Mogul, H.C. ; Kerber, M. ; Haase, G. ; Ogawa, E. ; McPherson, J.W. ; Xiong, W. ; Schulz, T. ; Schrufer, K. ; Cleavelin, R.
Author_Institution :
Infineon Technol., Munich
Abstract :
Future CMOS technology generations may implement multi-gate architectures according to S. M. Kim et al. (2004), D Ha et al. (2004), S.-Y. Kim et al. (2005), W.-S. Liao et al. (2005), S. Maeda et al. (2004), N. Collaert et al. (2005),and C. Jahan et al. (2005), together with a change from SiO2-based to high-k gate dielectrics and a change from poly-silicon to metal gate. The purpose of this work is to identify the influences of multi-gate architecture and metal gate on gate dielectric reliability and to demonstrate the dielectric reliability trend along the road map towards a CMOS process using triple gate architecture, metal gate, and HfSiON gate dielectric
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; high-k dielectric thin films; integrated circuit reliability; silicon compounds; titanium compounds; CMOS scaling; HfSiON; TiN; gate dielectric integrity; gate dielectric reliability; high-k gate dielectric; metal gate; multigate FET; triple gate architecture; Acceleration; Breakdown voltage; CMOS technology; Dielectric measurements; Double-gate FETs; Electric breakdown; Gate leakage; Instruments; Silicon; Tin;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251309
