DocumentCode
2733049
Title
Carrier Recombination in High-K Dielectrics and its Impact on Transient Charge Effects in High-k Devices
Author
Kang, C.Y. ; Choi, R. ; Song, S.C. ; Young, C.D. ; Bersuker, G. ; Lee, B.H. ; Lee, J.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
fYear
2006
fDate
26-30 March 2006
Firstpage
657
Lastpage
658
Abstract
In this paper, transient charge trapping and detrapping characteristics in high-k CMOSFET have been studied systematically. Detrapping characteristics for nMOSFET and pMOSFET are due to hole trapping and electron trapping, respectively. Transient charge recombination within high-k layer was found to be the main reason for the input signal dependence in high-k CMOSFET
Keywords
MOSFET; electron traps; electron-hole recombination; high-k dielectric thin films; hole traps; carrier recombination; charge detrapping; electron trapping; high-k CMOSFET; high-k dielectrics; hole trapping; transient charge effects; transient charge recombination; transient charge trapping; Charge carrier processes; Current measurement; Dielectric measurements; Electron traps; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Microelectronics; Pulse measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251310
Filename
4017251
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