DocumentCode :
2733064
Title :
P- to n-type conversion with sodium addition in bridgman-grown CuInSe2
Author :
Myers, H.F. ; Champness, C.H. ; Tan, Yue Hua ; Shih, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.
Keywords :
copper compounds; crystal growth from melt; indium compounds; ingots; selenium compounds; solar cells; Bridgman growth procedure; CuInSe2; Hall coefficient measurement; bulk material; ingots; melt grown material; monocrystal; p to n type conversion; solar cell; Conductivity; Copper; Films; Scanning electron microscopy; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614128
Filename :
5614128
Link To Document :
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